Rehm, RobertRobertRehmWalther, MartinMartinWaltherSchmitz, J.J.SchmitzRutz, FrankFrankRutzFleißner, J.J.FleißnerScheibner, R.R.ScheibnerZiegler, J.J.Ziegler2022-03-042022-03-042009https://publica.fraunhofer.de/handle/publica/21957710.1016/j.infrared.2009.09.0052-s2.0-70649103855We report on the development of high performance focal plane arrays for the mid-wavelength infrared spectral range from 3-5 lm (MWIR) on the basis of InAs/GaSb superlattice photodiodes. An investigation on the minority electron diffusion length with a set of six sample ranging from 190 to 1000 superlattice periods confirms that InAs/GaSb superlattice focal plane arrays achieve very high external quantum efficiency. This enabled the fabrication of a range of monospectral MWIR imagers with high spatial and excellent thermal resolution at short integration times. Furthermore, novel dual-color imagers have been developed, which offer advanced functionality due to a simultaneous, pixel-registered detection of two separate spectral channels in the MWIR.enInAs/GaSb superlatticequantum efficiencyinfrared focal plane arrayMWIRdual-colorcarbon dioxide667535InAs/GaSb superlattices for advanced infrared focal plane arraysjournal article