Lorenz, J.J.LorenzBurenkov, A.A.Burenkov2022-03-092022-03-092003https://publica.fraunhofer.de/handle/publica/343652The corner effect which is known as a leakage current crowding at the edges of the active areas in the shallow trench isolated MOS transistors is investigated in FINFET transistors using three-dimensional simulation. In contrast to conventional trench isolated MOS transistors, the corner effect in FinFETs leads to a depletion of the leakage currents in the corners of the active area and does not deteriorate the transistor performance.enFinFETcorner effectCMOS3D simulation670620530conference paper