Wolff, K.K.WolffHilleringmann, UlrichUlrichHilleringmann2022-03-042022-03-042011https://publica.fraunhofer.de/handle/publica/22765510.1016/j.sse.2011.01.046An enhancement-load inverter using bottom-gated ZnO nanoparticle thin-film transistors and a polymer gate dielectric is demonstrated. The deposition of the ZnO active layer is done by spin coating of a colloidal dispersion and is hence cost-effective. Since the maximum process temperature is 200 °C, the presented device is furthermore suitable for plastic substrates. Although hysteresis is observed, the inverter shows reasonable transfer characteristics with a gain of up to 5.5 V/V at a supply voltage between 10 V and 15 V, whereas the static power dissipation is lower than 6 micro-W.enjournal article