Systematic characterization of doping profiles in 4H-SiC by point contact current voltage measurements

Under CopyrightKocher, MatthiasMatthiasKocherNiebauer, MichaelMichaelNiebauerRommel, MathiasMathiasRommelHaeublein, VolkerVolkerHaeubleinBauer, AntonAntonBauer2022-03-1327.10.20162016https://publica.fraunhofer.de/handle/publica/39343310.24406/publica-fhg-393433en4H-SiCdoping profilepoint contact current voltage670620530Systematic characterization of doping profiles in 4H-SiC by point contact current voltage measurementsposter