Baeumler, MartinaMartinaBaeumlerSchneider, J.J.SchneiderMitchel, W.C.W.C.MitchelYu, P.W.P.W.YuKaufmann, U.U.Kaufmann2022-03-022022-03-021989https://publica.fraunhofer.de/handle/publica/17699210.1103/PhysRevB.39.6253GaAs doped with antimony (Sb) to a level of 10 high 19 cm high minus 3 has been studied by electron paramagnetic resoncance (EPR). A new EPR spectrum has been discovered which is identified as the Sb sub Ga heteroantisite defect. The electronic structure of this defect is practically indentical whith that of the intrinsic-anion antisite devects in GaP, GaAs, and InP. The EPR results show that Sb can be incorporated as an electrically active defect and therefore is not a suitable isovalent dopant in the growth of low-dislocation-density semi-insulating GaAs.enESRHetero-Antisite Defektisovalente Dotierungräumliche HomogenitätSbGasi-GaAs621667530journal article