Fukuzawa, M.M.FukuzawaHerms, M.M.HermsUchida, M.M.UchidaOda, O.O.OdaYamada, M.M.Yamada2022-03-032022-03-031999https://publica.fraunhofer.de/handle/publica/19543210.1143/JJAP.38.1156By using a scanning infrared polariscope (SIRP), the residual strain was characterized in semi-insulating wafers of slightly Fe-doped InP crystals treated by multiple-step wafer annealing (MWA). The SIRP maps of annealed wafers were compared with those of the as-grown adjacent wafers. It was revealed that the optimized MWA process did not generate an addtional, unwanted residual strain but homogenized its distribution.enInPSIRPresidual strainphotoelastic characterizationmulti-step wafer annealing620658670530journal article