Schygulla, PatrickPatrickSchygullaHeinz, Friedemann D.Friedemann D.HeinzLackner, DavidDavidLacknerDimroth, FrankFrankDimroth2022-03-142022-03-142020https://publica.fraunhofer.de/handle/publica/41016910.1109/PVSC45281.2020.9300801This work focuses on the material properties of two III-V semiconductors, AlGaAs and GaInAsP, and their usage as middle cell absorber materials in a wafer-bonded III-V//Si triple-junction solar cell. To this end single-junction solar cells were grown epitaxially lattice matched on GaAs wafers using metalorganic chemical vapor phase epitaxy (MOVPE). By optimizing the growth temperature and the V/III ratio we could increase the open-circuit voltage at a target absorber bandgap of 1.50 eV by up to 100 mV. In the future these results will be implemented into two-terminal III-V//Si triple-junction solar cells to increase the conversion efficiency beyond the current record of 34.1 % under the AM1.5g solar spectrum.enPhotovoltaikAlGaAsGaInAsPIII-V//SiMOVPEmultijunction solar cellsIII-V- und Konzentrator-PhotovoltaikIII-V Epitaxie und Solarzellen621697conference paper