Klumpp, A.A.KlumppLandesberger, C.C.Landesberger2022-03-082022-03-082002https://publica.fraunhofer.de/handle/publica/305310Process for connecting a 1st and a 2nd silicon wafer comprises (a) providing the 1st wafer with a polyimide layer on the main surface to be connected to the 2nd wafer, (b) producing a plasma-induced reaction between polyimide layer and water, (c1) producing a plasma-induced reaction between a main surface of the 2nd silicon wafer to be connected to the 1st wafer, and chlorine, or (c2) forming a SiO2 layer on the main surface of the 2nd silicon wafer to be connected to the 1st silicon wafer, and (d) connecting the two wafers by joining the two main surfaces. USE - Used in the production of integrated circuits. ADVANTAGE - The join has high tensile strength.de608621patent1996-19639682