Reuter, R.R.ReuterTegude, F.J.F.J.Tegude2022-03-092022-03-091998https://publica.fraunhofer.de/handle/publica/33092310.1109/MWSYM.1998.689341In this paper an analytical noise model for HFET, based on the physical interpretation of the bias dependence of the equivalent intrinsic noise sources, is presented. This model is bias-dependent and scaleable with the gate-geometry and allows the prediction of all noise parameters using two device dependent parameters in a wide bias range.enFETHEMTnoise modelRauschmodell621667conference paper