Endruschat, A.A.EndruschatNovak, C.C.NovakGerstner, H.H.GerstnerHeckel, T.T.HeckelJoffe, C.C.JoffeMärz, M.M.März2022-03-062022-03-062019https://publica.fraunhofer.de/handle/publica/25934810.1109/TPEL.2018.2889513This paper presents a universal SPICE model for field-effect transistors, which is independent from technology and semiconductor material. The created behavioral simulation model is based on a set of collected measurement data. The temperature-dependent output characteristics are modeled using a hybrid approach consisting of lookup tables and analytical equations. This leads to fast simulation times and very high accuracy. The validity for the static temperature-dependent behavior of this approach is verified for one SiC and one GaN transistor using the respective datasheet curves. The transistors nonlinear capacitances are modeled in dependence of their inter-electrode voltages. In order to verify the validity in the dynamic range, the universal model is applied to a GaN high-electron-mobility transistor. Double pulse measurements are used for the dynamic validation at a characterized measurement test bench regarding its parasitic elements. Therewith a proper validation of the simulation model at switching transients as low as 5 ns is achieved.en670621620530journal article