Gong, L.L.GongPetersen, S.S.PetersenFrey, L.L.FreyRyssel, H.H.Ryssel2022-03-032022-03-031995https://publica.fraunhofer.de/handle/publica/18637610.1016/0168-583X(94)00472-2A chemical delineation technique suitable for two dimensional dopant profiling has been investigated and improved. The formation of equi-concentration lines in p-doped areas during chemical etching due to drastic changes of the etching rate as function of dopant concentration has been studied. Formation of pn-junction, degeneration of the semiconductor, and formation of recombination centers are discussed as possible cause of these changes. In addition, a new etching procedure for delineation of equi-concentration lines in n-doped regions was successfully.enchemical delineationdopant concentrationeqiconcentration linestwo dimensional dopant profiling670620530539journal article