Samis, StanislavStanislavSamisFriesicke, ChristianChristianFriesickeLozar, RogerRogerLozarMaier, ThomasThomasMaierBrueckner, PeterPeterBruecknerQuay, RüdigerRüdigerQuayJacob, ArneArneJacob2022-03-142022-03-142020https://publica.fraunhofer.de/handle/publica/40941810.23919/MIKON48703.2020.9253908The paper investigates experimentally the effect of harmonic terminations on AlGaN/GaN power amplifiers (PA) performance at K-/Ka-band. Two technologies are compared,a 0.25 µm and 0.1 µm process. In both cases, a harmonic termination increases the achievable output power by about 10 % at the expense of bandwidth, whereas the efficiency is improved only in the first one.engallium nitridehigh power amplifierK-bandKa-BandMMICs667conference paper