Under CopyrightBlanco-Filgueira, B.B.Blanco-FilgueiraLópez, P.P.LópezDöge, J.J.Döge2022-03-1131.5.20112011https://publica.fraunhofer.de/handle/publica/37130510.24406/publica-r-37130510.1109/ICECS.2010.5724659An analytical model of the photoresponse of p-n junctions under a point source illumination is presented. The model measures the response of different regions of the pixel in terms of current. Both p-n+ and p-Nwell junction photodiodes were fabricated in a standard UMC 90nm technology and tested. Model and experimental data reveal a similar behaviour.enimage sensorsphotodiodesmodeling621004conference paper