Troppenz, U.U.TroppenzHamacher, M.M.HamacherRabus, D.G.D.G.RabusHeidrich, H.H.Heidrich2022-03-092022-03-092002https://publica.fraunhofer.de/handle/publica/34049010.1109/ICIPRM.2002.1014471All-active ring resonator structures allow filter operation as well as laser mode operation, only depending on the driving conditions. Add/drop filter devices based on active InGaAsP/InP have been realized for the 100 and 50 GHz free spectral range. The properties of all pass-filter elements built of active single ring resonators are investigated. A delay time up to 80 ps has been measured for a bending radius R of 250 mu m and a coupling ratio of 0.6 to the bus-waveguide. The respective dispersion of +or-280 ps/nm is attained within a pass band of 5 GHz. Operating in the laser mode, microring resonator structures with R = 50 mu m show a single mode emission spectrum with an optical power output as high as of 6.5 mW per facet.engallium arsenidegallium compoundsiii-v semiconductorsindium compoundslaser cavity resonatorsoptical communication equipmentoptical delay linesoptical filtersoptical resonatorsring laserssemiconductor lasersall-active ring resonator structuresfilter operationlaser mode operationdriving conditionsadd/drop filter devicesInGaAsP/InP ring cavitiesall pass-filter elementsadjustable wavelength filtersmicroring resonator structuressingle mode emission spectrum100 GHz50 GHz80 ps5 GHz6.5 mw250 micron50 micron621conference paper