Vassilev, V.V.VassilevWadefalk, N.N.WadefalkKozhuharov, R.R.KozhuharovAbbasi, M.M.AbbasiGunnarsson, S.E.S.E.GunnarssonZirath, H.H.ZirathPellikka, T.T.PellikkaEmrich, A.A.EmrichPantaleev, M.M.PantaleevKallfass, I.I.KallfassLeuther, ArnulfArnulfLeuther2022-03-042022-03-042010https://publica.fraunhofer.de/handle/publica/22255510.1109/LMWC.2010.2065797In this letter, we present results of fully integrated 90-130 GHz receiver based on 100 nm mHEMT technology. The receiver contains a low noise amplifier (LNA), mixer and LO multiplier chain integrated into a single monolithic microwave integrated circuit (MMIC). The circuit is packaged into a waveguide block, characterized and compared to on-wafer measurements. Waveguide to microstrip transitions are used to interface the MMIC to the waveguide. A breakout LNA circuit is also packaged, and its performance is compared to the receiver. The LNA noise was characterized on a wafer and after packaging. The packaged module is measured at both room and cryogenic temperatures, NF of 3.7 dB is measured at 300 K and 0.9 dB at 20 K.enfrequency multiplierMHEMTmillimeter wave circuitmillimeter wave receivermonolithic microwave integrated circuit (MMIC)118 GHz667530journal article