Quantifying the effect of metal-rich precipitates on minority carrier diffusion length in multicrystalline silicon using synchrotron-based spectrally resolved x-ray beam-induced current

Buonassisi, ToniToniBuonassisiIstratov, A.A.A.A.IstratovPickett, M.D.M.D.PickettMarcus, M.A.M.A.MarcusHahn, G.G.HahnCiszek, T.F.T.F.CiszekRiepe, StephanStephanRiepeIsenberg, JörgJörgIsenbergWarta, WilhelmWilhelmWartaSchindler, RolandRolandSchindlerWilleke, GerhardGerhardWillekeWeber, Eicke R.Eicke R.Weber2022-03-032022-03-032005https://publica.fraunhofer.de/handle/publica/20924110.1063/1.19972742-s2.0-23644454835en621697Quantifying the effect of metal-rich precipitates on minority carrier diffusion length in multicrystalline silicon using synchrotron-based spectrally resolved x-ray beam-induced currentjournal article