Wessely, P.J.P.J.WesselyWessely, F.F.WesselyBirinci, E.E.BirinciBeckmann, K.K.BeckmannRiedinger, B.B.RiedingerSchwalke, U.U.Schwalke2022-03-0423.4.20132012https://publica.fraunhofer.de/handle/publica/22907410.24406/publica-r-22907410.1016/j.physe.2011.12.022By means of catalytic chemical vapor deposition (CCVD) in-situ grown monolayer graphene field-effect transistors (MoLGFETs) and bilayer graphene transistors (BiLGFETs) are realized directly on oxidized silicon substrate without the need to transfer graphene layers. In-situ grown MoLGFETs exhibit the expected Dirac point together with the typical low on/off-current ratios. In contrast, BiLGFETs possess unipolar p-type device characteristics with an extremely high on/off-current ratio up to 1×10 7. The complete fabrication process is silicon CMOS compatible. This will allow a simple and low-cost integration of graphene devices for nanoelectronic applications in a hybrid silicon CMOS environment.engraphene transistorsCCVDbilayer graphene620530journal article