Moldovan, A.A.MoldovanFeldmann, F.F.FeldmannKaufmann, K.K.KaufmannRichter, S.S.RichterWerner, M.M.WernerHagendorf, C.C.HagendorfZimmer, M.M.ZimmerRentsch, J.J.RentschHermle, M.M.Hermle2022-03-1225.11.20152015https://publica.fraunhofer.de/handle/publica/38982910.24406/publica-r-38982910.1109/PVSC.2015.7356144A successful application of carrier selective contacts was demonstrated by using the tunnel oxide passivated contact (TOPCon) approach yielding a 24.9% efficient solar cell. A key factor of this contact is the ultra-thin SiOx tunnel layer which reduces interface recombination significantly but must not restrict carrier flow. Within this paper a comparison between the standard wet-chemical HNO3 oxide, a dry-grown UV/O3 oxide, and a wet-chemically grown oxide by using ozonized DI-H2O is drawn. The oxides' stoichiometry and structure are analyzed and will be set in relation with the effective surface passivation. It will be demonstrated that beneath certain UV/O3 oxides also wet-chemically grown oxides offer a high thermal stability during the annealing and can improve the passivation of n-TOPCon, especially on textured surfaces.enPV Produktionstechnologie und QualitätssicherungSilicium-PhotovoltaikOberflächen - KonditionierungPassivierungLichteinfangHerstellung und Analyse von hocheffizienten Solarzellencarrier-selective contactsoxidephoto-oxidationoxidationozone621621697697Tunnel oxide passivated carrier-selective contacts based on ultra-thin SiO2 layers grown by photo-oxidation or wet-chemical oxidation in ozonized waterconference paper