Liu, D.D.LiuCho, S.J.S.J.ChoHardy, A.A.HardyKim, J.J.KimHerrera-Rodriguez, C.J.C.J.Herrera-RodriguezSwinnich, E.E.SwinnichBaboli, M.A.M.A.BaboliGong, J.J.GongKonstantinou, X.X.KonstantinouPapapolymerou, J.J.PapapolymerouMohseni, P.K.P.K.MohseniBecker, M.M.BeckerSeo, J.-H.J.-H.SeoAlbrecht, J.D.J.D.AlbrechtGrotjohn, T.T.GrotjohnMa, Z.Z.Ma2022-03-142022-03-142019https://publica.fraunhofer.de/handle/publica/41110410.1109/BCICTS45179.2019.8972766We demonstrated GaAs/diamond (GaAs-C sp3 ) np diodes via lattice-mismatched semiconductor grafting: forming heterostructures with an ultrathin oxide (UO) layer at the interface. High-performance rectifying characteristics were measured from the GaAs/C sp3 diodes with sharp reverse breakdown voltage (Vb) of -44.5 V. Capacitance-voltage (CV) measurements were carried out and the measurement results were used to construct the band diagram of the pn junction. Furthermore, an AlGaAs/GaAs/C sp3 pnp structure was fabricated and both junctions were characterized for their I-V characteristics. The results show the prospect of realization of pnp AlGaAs/GaAs/C sp3 HBTs in the future.enconference paper