Burenkov, AlexAlexBurenkovLorenz, JuergenJuergenLorenz2022-03-132022-03-132016https://publica.fraunhofer.de/handle/publica/39381910.1109/SISPAD.2016.7605154Some experimentally implemented silicon nanowire tunnel FETs with silicided source contacts show an unexpectedly high electrical performance. Simulations using state-of-the-art simulation models and assuming usual device geometries cannot explain the high performance of these transistors: Conventional simulations of such tunnel FETs predict an on-state current which is several orders of magnitude lower than measured. In this work we show that thin silicide nano-spikes extending from the silicided source contact into the silicon channel of the nanowire tunnel FET could be a possible explanation of the high tunnel FET performance observed experimentally.ennanowire tunnel FETsiliconsilicidecollumnartransfer characteristicsconference paper