Baenziger, U.U.BaenzigerNeumann, G.G.NeumannScheer, H.C.H.C.Scheer2022-03-082022-03-081998https://publica.fraunhofer.de/handle/publica/304140The invention relates to a device for plasma generation by the inductive coupling of RF energy by means of an antenna. A problem of the purely inductive coupling is that electrical potentials which lead to a capacitive component of plasma generation occur on the antenna due to the finite inductance. This capacitive component is undesired since it leads to excessively high plasma potentials which have a negative impact on substrate treatment. The device according to the invention is characterized by an antenna which fully encloses the plasma production chamber in the form of a ring, whereby the two antenna feeders are linked to the ring and opposite points of the ring. A definite reduction in the capacitive component of the plasma generation compared with existing devices results from the low inductance of this antenna. The simple shape of the antenna permits a compact construction of the device. The main application of the device for plasma generation according to the invention is in t he plasma-assisted treatment of substrates in semiconductor production.de608621patent1994-4403125