Reinig, P.P.ReinigSelle, B.B.SelleFenske, F.F.FenskeFuhs, W.W.FuhsAlex, V.V.AlexBirkholz, M.M.Birkholz2022-03-032022-03-032002https://publica.fraunhofer.de/handle/publica/20204910.1116/1.1513634Nominally undoped polycrystalline silicon (poly-Si) thin films were deposited on glass at 450 deg C at high deposition rate (>100 nm/min) by pulsed dc magnetron sputtering. The pulse frequency was found to have a significant influence on the preferred grain orientation. The x-ray diffraction pattern exhibits a strong enhancement of the (400) reflex with increasing pulse frequency. The quantitative evaluation reveals that over 90 % of the grains are (100) oriented.The observed change in preferred grain orientation in poly-Si films at low temperatures is associated with concurrent ion bombardment of the growing film.en667533journal article