Hunsche, S.S.HunscheLeo, K.K.LeoKurz, H.H.KurzKöhler, KlausKlausKöhler2022-03-032022-03-031994https://publica.fraunhofer.de/handle/publica/18448810.1103/PhysRevB.49.16565We investigate the temporal evolution and the density dependence of exciton bleaching in GaAs/Al (ind x) Ga (ind 1-x) As quantum wells. We find that the carrier-induced reduction of exciton oscillator strength is not influenced by carrier cooling after creation of hot carriers with femtosecond laser pulses. Excitation density experiments suggest that either phase-space filling or Coulomb screening dominates the exciton bleaching, depending on the carrier density.enIII-V HalbleiterIII-V semiconductorsquantum wellstime resolved optical measurementzeitaufgelöste optische Messung621667530journal article