Paraskevopoulos, A.A.ParaskevopoulosKunzel, H.H.KunzelBottcher, J.J.BottcherUrmann, G.G.UrmannHensel, H.J.H.J.HenselBozbek, A.A.Bozbek2022-03-092022-03-091997https://publica.fraunhofer.de/handle/publica/32953510.1109/ICIPRM.1997.6000302-s2.0-0030653411High-quality InP material was grown with solid source molecular beam epitaxy (SSMBE) using a GaP source. Dry- as well as wet-etched corrugated quaternary surfaces (DFB-gratings) were successfully regrown with InP, fully planarized final surfaces were obtained in each case. Finally, InP regrowth on mesa structures demonstrates favourable conditions for butt-coupling integration schemes.endiffraction gratingsiii-v semiconductorsindium compoundsmolecular beam epitaxial growthoptical fabricationsemiconductor growthmbe regrowthpatterned surfaceoptoelectronic devicesolid source molecular beam epitaxydry etchingwet etchingcorrugated quaternary surfacedfb gratingplanarizationmesa structurebutt-coupling integrationinp621conference paper