Asmontas, S.S.AsmontasCesna, A.A.CesnaGradauskas, J.J.GradauskasKöhler, KlausKlausKöhlerKundrotaite, A.A.KundrotaiteKundrotas, J.J.KundrotasSuziedelis, A.A.SuziedelisValusis, G.G.Valusis2022-03-092022-03-091999https://publica.fraunhofer.de/handle/publica/334037We present experimental study of the influence of an electric field applied inparallel to the layers of GaAs/Al(0.35)Ga(0.65)As quantum wells on the photoluminescence at liquid nitrogen temperature, It is determined that the photoluminescence is quenched due to impact ionization of excitons. Main regularities of given processes are studied for different quantum wells at different illumination intensities.enIII-V semiconductorIII-V HalbleitersuperlatticeÜbergittertime resolved measurementzeitaufgelöste Messungoptical measurementoptische Messung621667conference paper