Effect of index-antiguiding on the threshold of GaN-based narrow ridge-waveguide laser diodes

Redaelli, L.L.RedaelliWenzel, H.H.WenzelWeig, T.T.WeigLükens, G.G.LükensEinfeldt, S.S.EinfeldtSchwarz, U.T.U.T.SchwarzKneissl, M.M.KneisslTränkle, G.G.Tränkle2022-03-122022-03-122013https://publica.fraunhofer.de/handle/publica/38385810.1364/CLEO_SI.2013.CF1F.3The effect of index antiguiding on GaN-based blue and violet laser diodes has been investigated. Strong antiguiding effects are proposed to be responsible for the large dependence of the threshold current density on the ridge etch depth.enEffect of index-antiguiding on the threshold of GaN-based narrow ridge-waveguide laser diodesconference paper