Quay, RüdigerRüdigerQuayTessmann, AxelAxelTessmannKiefer, R.R.KieferWeber, RainerRainerWeberRaay, Friedbert vanFriedbert vanRaayKuri, MichaelMichaelKuriRiessle, MarkusMarkusRiessleMassler, HermannHermannMasslerMüller, StefanStefanMüllerSchlechtweg, M.M.SchlechtwegWeimann, G.G.Weimann2022-03-092022-03-092003https://publica.fraunhofer.de/handle/publica/343742The operation of AlGaN/GaN HEMTs on SiC substrate at V-band frequencies (50-75 GHz) is discussed. Both common source and dual-gate AlGaN/GaN HEMTs on SiC substrate are optimized and investigated by active and passive load-pull measurements. At 60 GHz, a power density of >= 0.5 W/mm can be measured for a small common source AlGaN/GaN HEMT limited so far by the available input power of the newly developed load-pull system. A common source HEMT with W9=0.18 mm yields a power density of 1.9 W/mm at 40 GHz and a linear power gain of >= 5 dB at 60 GHz, while several dual-gate AlGaN/GaN HEMTs of W9=0.18 mm and 0.36 mm yield MSG/MAG values >= 12 dB at 60 GHz.enHEMTSiCsubstratepower amplifierLeistungsverstärkermillimeter wavetransistorMillimeterwellentransistor621667conference paper