Müller, M.M.MüllerGottfried-Gottfried, R.R.Gottfried-GottfriedKück, H.H.KückMokwa, W.W.Mokwa2022-03-082022-03-081993https://publica.fraunhofer.de/handle/publica/321008We report on the use of SIMOX substrates for fabrication or IR radiation thermopiles by CMOS technology. SIMOX technology enables the fabrication of single-crystal leads on thin silicon or silicon oxide membranes. Two p-type silicon/aluminium thermopiles on different membranes are presented. A thermopile with a 4 fm thick, epitaxially grown silicon membrane has a responsivity of 18 V/W and a time constant of 3 ms. Using a 2.5 fm thick silicon oxide membrane, a responsivity of 150 V/W and a time constant of 25 ms are achieved. In addition, the fabrication and properties of an IR absorber made in CMOS technology are presented.enInfrarotdetektorMeßaufnehmerMikrosystemtechnikSIMOXThermosäule621conference paper