Grote, N.N.GroteBach, H.G.H.G.BachFeifel, T.T.FeifelFranke, D.D.FrankeHarde, P.P.HardeSartorious, B.B.SartoriousWolfram, P.P.Wolfram2022-03-082022-03-081989https://publica.fraunhofer.de/handle/publica/317061Semi-insulating InP epi-substrates formed by epitaxial InP:Fe layers on suitable base substrates are proposed and investigated. Compared to standard commercial s.i. bulk substrates, such epi-substrates offer lower defect densities, well-controllable Fe-levels and considerably higher specific resistivities.enelectronic conduction in crystalline semiconductor thin filmsiii-v semiconductorsindium compoundsironsemiconductor epitaxial layerssubstratesiii-v semiconductorepitaxial layerscontrollable dopant levelsubstrate applicationsepi-substratesdefect densitiesspecific resistivities621conference paper