Thome, FabianFabianThomeSchwantuschke, DirkDirkSchwantuschkeBrückner, PeterPeterBrücknerWang, XiaopengXiaopengWangHwang, James C.M.James C.M.HwangQuay, RüdigerRüdigerQuay2024-08-132024-08-132024https://publica.fraunhofer.de/handle/publica/47314010.1109/IMS40175.2024.10600353This paper demonstrates the monolithic integration of a substrate-integrated waveguide bandpass filter (BPF) and a low-noise amplifier (LNA) at F-band, fabricated in a 70-nm GaN-on-SiC technology. The three-stage LNA alone achieves a state-of-the-art average noise figure of 3.6 dB over 87-115 GHz. The LNA + BPF exhibits a peak gain of 13.6 dB over a 3 dB bandwidth of 17 GHz from 104 to 121 GHz. The average noise figure is 4.9 dB over 87-115 GHz. The OP 1dB and saturated output power are 17.6 dBm and >20 dBm, respectively.enbandpass filter (BPF)gallium nitride (GaN)high-electron-mobility transistors (HEMTs)low-noise amplifiers (LNAs)millimeter wave (mmW)monolithic microwave integrated circuits (MMICs)substrate-integrated waveguide (SIW)conference paper