Ding, S.-F.S.-F.DingXie, Q.Q.XieWaechtler, T.T.WaechtlerLu, H.-S.H.-S.LuSchulz, Stefan E.Stefan E.SchulzQu, X.-P.X.-P.Qu2022-03-112022-03-112010https://publica.fraunhofer.de/handle/publica/36914710.1109/IITC.2010.55103152-s2.0-77955620014The enhanced oxidation of Cu on Ru/diffusion barriers was observed. The in-situ X-ray diffraction results reveal that the Cu oxidation can be inhibited by doping C in either Ru adhesion layer or TaN barrier layer. The RuC/barrier becomes more robust with certain amount of C doped in Ru. ALD Cu2O on the RuC substrate was carried out and the effect of C on reduction of Cu oxide was observed.enconference paper