Szyszka, B.B.SzyszkaPolenzky, C.C.PolenzkyLoebmann, P.P.LoebmannGötzendorfer, S.S.GötzendorferElsaesser, C.C.ElsaesserKörner, W.W.Körner2022-03-112022-03-112010https://publica.fraunhofer.de/handle/publica/36862410.4028/www.scientific.net/AST.75.16State of the art optoelectronic applications such as thin film solar cells, flat panel displays, and light emitting diodes suffer from the non-availability of p-type oxide materials on the industrial scale. Novel technologies such as transparent electronics, UV light emitting diodes, and improved thin film solar cells using wide band gap p-type oxide layers as front contact will be available once p-type oxide layers with proper layer and interface properties can be obtained on an industrial scale. In this paper, we report on our progress towards p-type oxide layers for industrial applications. We address the first principles density functional theory modeling of ZnO based layers where a pathway towards p-conductivity is seen taking the nitrogen doping of grain boundaries into account. The second part of the paper is on the synthesis of p-type Delafossite layers such as CuCr1-xAlxO2:Mg by Sol-Gel and CuCrO2 by hollow cathodes gas flow sputtering. We report on the deposition processes and film properties obtained. Both methods reveal p-type conductivity by means of Seebeck-coefficient measurements.enp-type oxidesfirst principles density functional theorysol-gel routehollow cathode gas flow sputteringSeebeck measurements667conference paper