Thome, FabianFabianThomeNeininger, PhilippPhilippNeiningerKrause, SebastianSebastianKrauseBrückner, PeterPeterBrücknerQuay, RüdigerRüdigerQuay2024-08-132024-08-132024https://publica.fraunhofer.de/handle/publica/47312110.1109/IMS40175.2024.10600384This paper demonstrates a broadband transmit/ receive (Tx/Rx) front-end monolithic microwave integrated circuit (MMIC) for Ka-band operation. The MMIC is fabricated in a robust 0.15-µm GaN-on-SiC high-electron-mobility transistor (HEMT) technology and includes a three-stage low-noise amplifier (LNA), a three-stage power amplifier, and Tx/Rx selection single-pole double-throw switch. All components operate at a derated voltage of 20 V at most. The Tx path provides an output power of 32.2-34.9 dBm over an operating frequency from 31 to 40 GHz. The Rx path exhibits a small-signal gain and noise figure (NF) of (21.2 ± 2.5) dB and 2.7-3.5 dB, respectively, covering the entire Ka-band (26.5-40 GHz). Up to 36.5 GHz, the NF is below 3 dB. Furthermore, the output power at 1-dB gain compression of the Rx path is 11.6-13.7 dBm and can be increased to >14.9dBm. The stand-alone LNA yields an NF of 1.5-2.4 dB from 25 to 40 GHz.enFront-end modules (FEMs)gallium nitride (GaN)high-electron-mobility transistors (HEMTs)low-noise amplifiers (LNAs)millimeter wave (mmW)monolithic microwave integrated circuits (MMICs)power amplifiers (PAs)single-pole double-throw (SPDT)switchesconference paper