Shani, Y.Y.ShaniKatzir, A.A.KatzirPreier, H.M.H.M.PreierTacke, M.M.Tacke2022-03-022022-03-021988https://publica.fraunhofer.de/handle/publica/17473710.1063/1.1003992-s2.0-36549103024Grating coupled emission PbSnSe/PbEuSnSe double-heterostructure stripe-geometry diode lasers were fabricated using molecular beam epitaxy. Low-divergence far-field patterns of some 5 degrees for multimode operation and some 2 degrees for single-mode operation were obtained. These are the lowest values ever achieved with Pb salt lasers. (IPM)enDBR-LaserDiodenlaserInfrarotlaserLaser(gittergekoppelt)MonomodelaserStrahlcharakteristik621Highly collimated laser beams from grating coupled emission PbSnSe/PbEuSnSe diode lasers.Stark kolliminierte Ausgangsstrahlung von gittergekoppelten PbSnSe/PbEuSnSe Diodenlasernjournal article