Meyers, T.T.MeyersVollbrecht, J.J.VollbrechtVidor, F.F.F.F.VidorReker, J.J.RekerKitzerow, H.-S.H.-S.KitzerowHilleringmann, UlrichUlrichHilleringmann2022-03-132022-03-132017https://publica.fraunhofer.de/handle/publica/399459In this article we present an integration technique to improve the performance of DNTT-based TFTs in inverted coplanar architecture. An alkanethiol treatment of the source- and drain-electrodes was employed to reduce the occurring Schottky barrier formed at the metal-semiconductor interface. To evaluate the influence of the alkanethiol treatment (un-)treated OTFTs were integrated and compared regarding their electrical characteristics. Furthermore, first electronic circuits, on the one hand inverter in single-type technology, and on the other hand organic light emitting diode (OLED) devices controlled by a treated DNTT-based TFT, were fabricated and analysed.enconference paper