Yang, X.X.YangMüller, RalphRalphMüllerShalav, A.A.ShalavXu, L.L.XuLiang, W.W.LiangZhang, R.R.ZhangBi, Q.Q.BiWeber, K.K.WeberMacDonald, DanielDanielMacDonaldElliman, R.R.Elliman2022-03-042022-03-042014https://publica.fraunhofer.de/handle/publica/23891610.1016/j.egypro.2014.08.093Ion implantation and laser processing technologies are very attractive for the fabrication of industrially feasible interdigitated back-contact (IBC) solar cells. In this work, p+ emitters were fabricated by boron implantation and laser annealing, and the electrical properties of emitters were investigated. An emitter sheet resistance (Rsh) in the range of 30-200 O/OS could be achieved by varying the implanted dose. The saturation current density (Joe) of the passivated p+ emitter with Rsh of ∼125 O/OS reached 95 fA/cm2, and the contact resistivity was determined to be as low as 5×10-6 O·cm2. Such localized p+ emitters can be applied to n-type IBC solar cells, which could avoid the high temperature thermal annealing step and related problems.enjournal article