Peter, M.M.PeterForker, J.J.ForkerWinkler, K.K.WinklerBachem, K.H.K.H.BachemWagner, J.J.Wagner2022-03-032022-03-031995https://publica.fraunhofer.de/handle/publica/18677010.1007/BF026768102-s2.0-51249168375Two types of quantum well (QW) structures grown lattice matched on (100) GaAs have been studied. The first type of structure consists of pseudomorphic GaAsxSb1-x/GaAs (x equal or smaller than 0.3) SQWs which show emission wavelengths longer than those reported for pseudomorphic InyGa1-yAs/GaAs QWs. However, the attractive emission wavelenght of 1.3 nanometre has not been achieved. To reach this goal, a novel type of bilayer QW (BQW) has been grown consisting of a stack of two adjacent pseudomorphic layers of GaAsxSb1-x and InyGa1-yAs embedded between GaAs confinement layersenchemical vapour depositionGaAsMOCVDoptoelectronicsOptoelektronik621667journal article