Sulmoni, L.L.SulmoniLamy, J.-M.J.-M.LamyDorsaz, J.J.DorsazCastiglia, A.A.CastigliaCarlin, J.F.J.F.CarlinScheibenzuber, W.G.W.G.ScheibenzuberSchwarz, U.T.U.T.SchwarzZeng, X.X.ZengBoiko, D.L.D.L.BoikoGrandjean, N.N.Grandjean2022-03-042022-03-042012https://publica.fraunhofer.de/handle/publica/22991510.1063/1.4768163We have studied multi-section InGaN multiple-quantum-well (MQW) laser diodes grown on c-plane freestanding GaN substrate consisting of an absorber section (AS) and an amplifier gain section. As a result of the interplay between external bias applied to the AS and the internal piezoelectric and spontaneous polarization fields inherent to c-plane InGaN MQWs, the devices exhibit non-linear non-monotonic variations of the threshold current due to the quantum-confined Stark effect that takes place in the AS MQWs. We report on how this effect tailors the lasing characteristics and lasing dynamics, leading from a steady-state cw lasing regime for an unbiased AS to self-pulsation and Q-switching regimes at high negative absorber bias.en667530journal article