Kiefer, R.R.KieferQuay, RüdigerRüdigerQuayMüller, StefanStefanMüllerFeltgen, T.T.FeltgenRaynor, B.B.RaynorSchleife, J.J.SchleifeKöhler, KlausKlausKöhlerMassler, HermannHermannMasslerRamberger, S.S.RambergerRaay, Friedbert vanFriedbert vanRaayTessmann, AxelAxelTessmannMikulla, MichaelMichaelMikullaWeimann, G.G.Weimann2022-03-032022-03-032003https://publica.fraunhofer.de/handle/publica/20477410.1002/pssa.200303415The suitability of AlGaN/GaN HEMTs on SiC is discussed with respect to mm-wave applications at 40 GHz and beyond. A 0.15 µm T-gate AlGaN/GaN-HEMT 2-inch technology on SiC and sapphire was developed for high power applications and for frequencies beyond 30 GHz. Large periphery devices with 0.48 mm gate width show a cw output power of 0.86 W at 40 GHz. AlGaN/GaN dual-gate HEMTs show MSG/MAG of >13 dB at 60 GHz with 0.15 µm gate length.enGaNSiCmillimeter waveMillimeterwelleMMICMODFETMikrowellen-Leistungsverstärkermicrowave power amplifier621667530Development of a 2"-AlGaN/GaN HEMT technology on sapphire and SiC for mm-wave high-voltage power applicationsEntwicklung einer 2"-AlGaN/GaN HEMT Technologie auf Saphir- und SiC Substraten für mm-Wellen Hochspannungs- und Hochleistungsanwendungenjournal article