Heinz, FelixFelixHeinzSchwantuschke, DirkDirkSchwantuschkeOhlrogge, MatthiasMatthiasOhlroggeLeuther, ArnulfArnulfLeutherAmbacher, OliverOliverAmbacher2022-03-142022-03-142019https://publica.fraunhofer.de/handle/publica/4042982-s2.0-85065552569A parameter extraction procedure for noise models in distributed multiport topology is presented. This model topology is able to describe the small-signal behavior of high electron mobility transistors (HEMTs) even in the sub millimeter-wave regime while providing full model-scalability. The method introduces an efficient way to extract both the active, intrinsic transistor parameters and the noise properties for distributed multiport models. A fully scalable small-signal and noise-model of a 50nm metamorphic HEMT technology in the distributed multiport approach is presented.enhigh electron mobility transistor (HEMT)small signal modelnoise modelnoise measurementnoise667conference paper