Knetzger, M.M.KnetzgerMeissner, E.E.MeissnerDerluyn, J.J.DerluynGermain, M.M.GermainFriedrich, J.J.Friedrich2022-03-132022-03-132016https://publica.fraunhofer.de/handle/publica/39597710.4028/www.scientific.net/SSP.242.417The influence of structural defects in the active layer of GaN-on-Si substrates on the vertical leakage current was studied. The structural defects were analyzed by analytical scanning electron microscopy by means of cathodoluminescence (CL). The leakage current was determined by vertical I-V measurements. Two possibilities were found, which give potential explanations for the variations of the vertical leakage current: i) Threading dislocations, which may partially form leakage paths, were detected by CL imaging. ii) Variations of the carbon doping, which is used to tune GaN to a semi insulating material were revealed by CL spectroscopy.enconference paper