Feldmann, FrankFrankFeldmannBivour, MartinMartinBivourReichel, ChristianChristianReichelHermle, MartinMartinHermleGlunz, Stefan W.Stefan W.Glunz2022-03-126.12.20132013https://publica.fraunhofer.de/handle/publica/38153510.24406/publica-r-38153510.4229/28thEUPVSEC2013-2CO.4.4Due to the improvements in material quality and surface passivation, high-efficiency solar cells are often limited by the recombination at the metal semiconductor contacts. As a solution to this problem, Swanson proposed ""to put a heterojunction with a band-gap larger than silicon between the metal and silicon""[1] also known as passivated contact. In this work, a tunnel oxide passivated contact (TOPCon) structure allowing both an excellent surface passivation and an effective carrier transport is presented. High-efficiency n-type solar cells featuring this novel passivated rear contact instead of a point contact structure at the rear side yield a maximum efficiency of 23.7 %, a FF of 82.2 % and a Voc of 703 mV.enSolarzellen - Entwicklung und CharakterisierungSilicium-PhotovoltaikHerstellung und Analyse von hocheffizienten SolarzellenModulintegrationMISn-typecontactconference paper