Dammann, MichaelMichaelDammannChertouk, M.M.ChertoukJantz, W.W.JantzKöhler, KlausKlausKöhlerSchmidt, KlausKlausSchmidtWeimann, G.G.Weimann2022-03-092022-03-091999https://publica.fraunhofer.de/handle/publica/33302510.1109/RELPHY.1999.761599Accelerated life tests of 0. 15 mu m gate length InAlAs/InGaAs HEMTs were performed under DC electrical stress at four temperatures in nitrogen. By defining a 100 per cent-degradation of transconductance as failure criterion we found an activation energy of 1.8 eV and a projected life time of 5x10(exp 6) h at 125 degree ambient temperature. The degradation was found to be much faster in air than in nitrogen. High temperature storage tests showed that our devices are not sensitive to hydrogen.enFluorfluorineHEMTInPLebensdauerlife timereliabilityZuverlässigkeit621667conference paper