Heigl, M.M.HeiglNeumeier, K.K.NeumeierEisele, I.I.Eisele2022-03-132022-03-132016https://publica.fraunhofer.de/handle/publica/394721The concept of a new Nanogap-Field-Effect-Transistor (NanoFET) with suspended monocrystalline gate structures is discussed. It is a robust CMOS compatible NEMS (Nano-Electro-Mechanical-System) device, which can be used as sensor, actuator or electronic resonator. The manufacturing process and measurements of the mechanical as well as electrical behavior of NanoFET devices are presented.enconference paper