Ulbricht, S.S.UlbrichtBudde, W.W.BuddeGottfried Gottfried, R.R.Gottfried GottfriedJähne, R.R.JähneSauer, B.B.SauerWende, U.U.Wende2022-03-092022-03-091996https://publica.fraunhofer.de/handle/publica/326594The cointegration of high-speed NMOS devices and inductive elements by means of a SIMOX-technology with high-resistive substrates enables operating frequencies which meet the needs of modern communication systems. This paper describes a RF frontend operating in the frequency range 1.4 to 1.9GHz. The performance of the presented circuit proves the capability of this technology to realize complete RF-systems on a single chip.enCMOSintegriertes Sensorsystemmagnetischer SensorMagnetometermonolithisches SensorsystemZweirichtungs-Magnetfeldsensor621conference paper