Agrawal, N.N.AgrawalFranke, D.D.FrankeGrote, N.N.GroteReier, F.W.F.W.ReierSchroeter-Janssen, H.H.Schroeter-Janssen2022-03-032022-03-031992https://publica.fraunhofer.de/handle/publica/18244510.1016/0022-0248(92)90525-NThe authors report on MOVPE growth and characterization of InGaAs/In(GaAs)P and InGaAsP/InP/InAlAs multi-quantum-well structures for electro-optic switching devices, which require abrupt compositional and doping interfaces. Strongly coupled InGaAs/InP Wannier superlattices with a large number of periods show excellent photoluminescence quality and surface morphology. In addition, band-filling effects with very low leakage current density are demonstrated by incorporating InAlAs barrier layers into InGaAsP/InP modulation doped electron transfer structures.enaluminium compoundselectro-optical devicesgallium arsenidegallium compoundsiii-v semiconductorsindium compoundsluminescence of inorganic solidsphotoluminescencesemiconductor growthsemiconductor quantum wellssurface structurevapour phase epitaxial growthmetalorganic vapour phase epitaxial growthcompositional interfacescharacterizationelectro-optic switching devicesdoping interfacesinGaAs/InP wannier superlatticesphotoluminescence qualitysurface morphologyband-filling effectsleakage current densityinalas barrier layersinGaAsp/InP modulation doped electron transfer structuresinGaAsp-InP-inalas multiquantum well structuresinGaAs-in(GaAs)p multiquantum well structuresinGaAsp-in(GaAs)pinGaAsp-InP-inalas621548journal article