Kuenzel, H.H.KuenzelGibis, R.R.GibisKizuki, H.H.KizukiAlbrecht, P.P.AlbrechtEbert, S.S.EbertHarde, P.P.HardeMalchow, S.S.MalchowKaiser, R.R.Kaiser2022-03-032022-03-031998https://publica.fraunhofer.de/handle/publica/1939262-s2.0-0343700397The fabrication of advanced undoped and semi-insulating optical waveguides to be implemented in integrated photonic ICs on InP is demonstrated on the basis of the metal organic molecular beam epitaxy growth technique. The optimised deposition of waveguide layer structures of high crystalline and optical quality resulted in optical losses as low as 0.7/0.9 dB/cm (TE/TM polarisation) at lambda =1.55 mu m. Implementation of a thin InP marker between the slab and the rib served to control rib formation during dry etching. Doping with iron using an elemental source was applied for semi-insulating behaviour of the waveguide devices. Selective area deposition of the waveguide layer structure at a growth temperature of 485 degrees C around a masked laser layer stack to enable laser/waveguide butt coupling has been developed to meet the requirements imposed by photonic ICs.enchemical beam epitaxial growthetchinggallium arsenideiii-v semiconductorsindium compoundsintegrated opticsironoptical waveguidesphotoluminescencescanning electron microscopysecondary ion mass spectrasemiconductor dopingsemiconductor epitaxial layerssemiconductor laserssurface structurex-ray diffractionmombemetal-organic molecular beam epitaxyintegrated photonic icwaveguide layer structurescrystalline propertiesoptical propertiesoptical lossesdry etchingdopingselective area depositiongrowth temperaturemasked laser layer stacksemxrdsims900 to 950 c485 c1.05 micron1.15 microninp621548journal article