Heberle, A.P.A.P.HeberleRühle, W.W.W.W.RühleKöhler, KlausKlausKöhler2022-03-082022-03-081992https://publica.fraunhofer.de/handle/publica/320185Time-resolved photoluminescence measurements in the picosecond regime are reported for a GaAs/Alsub0.35Gasub0.65As asymmetric double quantum well structure biased by electric fields of positive or negative polarity. A large number of electron and hole resonances is detected. A splitting of the ground state resonances reveals the importance of excitonic effects. Longitudinal optical phonon assisted tunneling plays a minor role for narrow quantum wells in comparison with impurity or interface roughness assisted transfer.enheterostructureHeterostrukturIII-V HalbleiterIII-V semiconductorstime resolved photoluminescencezeitaufgelöste Photolumineszenz621667conference paper