Under CopyrightGeisler, C.C.GeislerKluska, SvenSvenKluskaHopman, SybilleSybilleHopmanGlatthaar, MarkusMarkusGlatthaar2022-03-0516.8.20192015https://publica.fraunhofer.de/handle/publica/24017310.24406/publica-r-24017310.1109/jphotov.2015.2407152Laser-induced selective Si doping and simultaneous ablation of a dielectric passivation layer is a promising technology for the creation of efficient and cost-effective solar cells. In this paper, the electrical quality of emitters produced with a 532-nm continuous-wave laser will be discussed using elaborate analysis of quasi-steady-state photoconductance (QSSPC) measurements. It will be shown that these emitters cause good charge carrier shielding, which leads to emitter saturation current densities as low as 240 fA/cm2 for unpassivated surfaces. If an SiNx layer is present during laser doping, the emitter recombination increases by a factor of three. This detrimental effect is put down to the formation of microcavities within the recrystallized Si. A model of the ablation mechanism and cavity formation for long laser pulses is proposed, with the experimental data in this study serving as a limiting case for long irradiation lengths.enSolarzellen - Entwicklung und CharakterisierungSilicium-PhotovoltaikCharakterisierung von Prozess- und Silicium-MaterialienDotierung und DiffusionOberflächen - KonditionierungPassivierungLichteinfangKontaktierung und StrukturierungHerstellung und Analyse von hocheffizienten SolarzellenLaserQSSPCEmitterSiNxablationjournal article