Katzir, A.A.KatzirShani, Y.Y.ShaniTacke, M.M.TackePreier, H.M.H.M.Preier2022-03-022022-03-021988https://publica.fraunhofer.de/handle/publica/174931Distributed feedback PbSnSe/PbEuSnSe double heterostructure stripe geometry diode lasers were fabricated using molecular beam epitaxy. These lasers operated in cw mode up to 90 K and in the pulse mode up to 100 K. They were unique in their low tuning rate with injection current 4 cm-1/A, and in that they withstood high cw injection currents without damage. These features are probably the results of the metal cladding layer located on top of the gratings.enBleichalkogenid-Doppelheterostruktur-LaserDistributed Feedback LaserLaser mit verteilter RückkopplungLead Chalcogenide Double Heterostructure LaserPb1-xSnxSe/Pb1-x-yEuySnxSe-Laser621journal article